| 发明名称 |
MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF |
| 摘要 |
According to one embodiment, a magnetoresistive effect element includes a first ferromagnetic layer, a tunnel barrier provided on the first ferromagnetic layer, and a second ferromagnetic layer provided on the tunnel barrier. The tunnel barrier includes a nonmagnetic mixture containing MgO and a metal oxide with a composition which forms, in a solid phase, a single phase with MgO. |
| 申请公布号 |
US2014284592(A1) |
申请公布日期 |
2014.09.25 |
| 申请号 |
US201313962918 |
申请日期 |
2013.08.08 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAGAMINE Makoto;IKENO Daisuke;NISHIYAMA Katsuya;NATORI Katsuaki;YAMAKAWA Koji |
| 分类号 |
H01L43/02;H01L43/12 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A magnetoresistive effect element comprising:
a first ferromagnetic layer; a tunnel barrier provided on the first ferromagnetic layer; and a second ferromagnetic layer provided on the tunnel barrier, wherein the tunnel barrier includes a nonmagnetic mixture containing MgO and a metal oxide with a composition which forms, in a solid phase, a single phase with MgO. |
| 地址 |
Tokyo JP |
