| 发明名称 |
GRAPHENE BASE TRANSISTOR WITH REDUCED COLLECTOR AREA |
| 摘要 |
A graphene base transistor with reduced collector area comprising an electron injection region, an electron collection region, and a base region wherein the base region comprises one or more sheets of graphene and wherein the base region is intermediate the electron injection region and the electron collection region and forms electrical interfaces therewith. A method of making a graphene base transistor with reduced collector area comprising forming an electron injection region, forming an electron collection region, and forming a base region wherein the base region comprises one or more sheets of graphene and wherein the base region is intermediate the electron injection region and the electron collection region and forms electrical interfaces therewith. |
| 申请公布号 |
US2014284552(A1) |
申请公布日期 |
2014.09.25 |
| 申请号 |
US201414178375 |
申请日期 |
2014.02.12 |
| 申请人 |
Kub Francis J.;Anderson Travis J.;Koehler Andrew D. |
发明人 |
Kub Francis J.;Anderson Travis J.;Koehler Andrew D. |
| 分类号 |
H01L29/16;H01L29/66;H01L29/737 |
主分类号 |
H01L29/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A graphene base transistor with reduced collector area comprising:
an electron emitter region; an electron collection region; and a base region wherein the base region comprises one or more sheets of graphene and wherein the base region is intermediate the electron injection region and the electron collection region and forms electrical interfaces therewith. |
| 地址 |
Arnold MD US |
