| 发明名称 |
RESISTANCE RANDOM ACCESS MEMORY DEVICE |
| 摘要 |
A resistance random access memory device according to one embodiment includes an interlayer insulation film which a trench is made therein, an ion supply layer provided along a bottom surface and a side surface of the trench, a portion of the ion supply layer provided along the bottom surface is thicker than a portion of the ion supply layer provided along the side surface, and a resistance change layer provided at least below the ion supply layer. |
| 申请公布号 |
US2014284536(A1) |
申请公布日期 |
2014.09.25 |
| 申请号 |
US201313954169 |
申请日期 |
2013.07.30 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
ARAYASHIKI Yusuke;SUGIMAE Kikuko |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A resistance random access memory device, comprising:
an interlayer insulation film, a trench being made in the interlayer insulation film; an ion supply layer provided along a bottom surface and a side surface of the trench, a portion of the ion supply layer provided along the bottom surface being thicker than a portion of the ion supply layer provided along the side surface; and a resistance change layer provided at least below the ion supply layer. |
| 地址 |
Minato-ku JP |
