GRAPHENE GROWTH ON PLANES OFFSET FROM A SUBSTRATE

摘要

The various implementations described herein provide methods of manufacturing a graphene structure that has a planar width that is smaller than the smallest dimension that can be produced by a lithographic process on a plane parallel to the plane of the substrate. In particular, one aspect of the disclosure includes methods of manufacturing a device including a plurality of graphene stacks that includes forming a plurality of exposed side walls in a foundation material covering the substrate and forming prohibitive caps at the respective ends of each side wall. The prohibitive caps isolate graphene growth to the side wall areas. A respective graphene stack in the plurality of graphene stacks is grown on each exposed side wall such that each graphene stack in the plurality of graphene stacks is oriented along the corresponding exposed side wall. Another aspect of the disclosure includes devices produced by the methods disclosed herein.