发明名称 |
HIGH RELIABILITY ETCHED-FACET PHOTONIC DEVICES |
摘要 |
Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device. |
申请公布号 |
US2014287544(A1) |
申请公布日期 |
2014.09.25 |
申请号 |
US201414296139 |
申请日期 |
2014.06.04 |
申请人 |
BinOptics Corporation |
发明人 |
BEHFAR Alex A. |
分类号 |
H01S5/323 |
主分类号 |
H01S5/323 |
代理机构 |
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代理人 |
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主权项 |
1. A process for fabricating a photonic device, comprising:
forming on a top surface of a substrate a semiconductor structure comprising an active layer; dry etching said semiconductor structure to form a laser having at least one facet; covering said laser and said at least one facet with a protective layer; opening a contact window in said protective layer; and depositing a metal layer to cover said contact window and to electrically contact said laser. |
地址 |
Ithaca NY US |