发明名称 HIGH RELIABILITY ETCHED-FACET PHOTONIC DEVICES
摘要 Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.
申请公布号 US2014287544(A1) 申请公布日期 2014.09.25
申请号 US201414296139 申请日期 2014.06.04
申请人 BinOptics Corporation 发明人 BEHFAR Alex A.
分类号 H01S5/323 主分类号 H01S5/323
代理机构 代理人
主权项 1. A process for fabricating a photonic device, comprising: forming on a top surface of a substrate a semiconductor structure comprising an active layer; dry etching said semiconductor structure to form a laser having at least one facet; covering said laser and said at least one facet with a protective layer; opening a contact window in said protective layer; and depositing a metal layer to cover said contact window and to electrically contact said laser.
地址 Ithaca NY US