SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING DEVICE AND RECORDING MEDIUM

摘要

Provided is a semiconductor device manufacturing method having the following steps: a step in which a plurality of substrates (200) are placed along a rotation direction on a substrate placement platform, that is rotatably provided inside of a reaction chamber, so that uniform film formation can be achieved even if plasma ignites while the substrates are passing; a step in which the supply of a first element-containing gas is begun in a first processing region (201a); a step in which the supply of a second element-containing gas is begun in a second processing region (201b); a first step in which a plasma generating section (206) provided in the second processing region (201b) begins generating the plasma, of a first degree of activity, of the second element-containing gas; and a second step in which according to the aforementioned rotation, the plurality of substrates (200) are sequentially and alternately caused to pass through the first processing region (201a) and the second processing region (201b) a prescribed number of times, a first element-containing layer is formed in the first processing region (201a), the first element-containing layer is modified by generating in the second processing region (201b) a plasma of a second degree of activity that is higher than the first degree of activity, and a thin film is formed that contains the first and second elements.