| 发明名称 |
Ti-Al ALLOY SPUTTERING TARGET |
| 摘要 |
<p>A Ti-Al alloy sputtering target comprising a Ti-Al alloy comprising 15 to 90 wt% of Al and a remainder made up by Ti, said sputtering target being characterized in that the average crystal particle diameter of the Ti-Al alloy is 150μm or less. Provided is a useful Ti-Al alloy sputtering target which can be used for the formation of a barrier film for preventing the staining of a laminated thin film which can occur as the result of the interdiffusion of substances constituting the laminated thin film.</p> |
| 申请公布号 |
WO2014148424(A1) |
申请公布日期 |
2014.09.25 |
| 申请号 |
WO2014JP57113 |
申请日期 |
2014.03.17 |
| 申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
HARADA KENTARO;ASANO TAKAYUKI |
| 分类号 |
C23C14/34;C22C1/04;C22C14/00;C22C21/00;H01L21/285 |
主分类号 |
C23C14/34 |
| 代理机构 |
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| 主权项 |
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