| 摘要 |
<p>Provided is a DRAM self-refresh method, the method comprising performing the following steps while a first word line of the DRAM remains activated: i) reading a data bit and a check bit in a first set of storage units on the first word line, the check bit being generated for the data bit according to an error correction code rule; and determining whether the data bit and the check bit are correct by decoding the error correcting code; if the data bit and/or the check bit are incorrect, then writing a correct data bit and/or a correct check bit back to thecorresponding storage unit.</p> |
