| 摘要 |
PROBLEM TO BE SOLVED: To provide various embodiments of ion implantation method and system under high temperature surface equilibrium state.SOLUTION: An ion implantation method under high temperature surface equilibrium state includes: a step 320 for placing a group III nitride semiconductor body in a surface equilibrium chamber; a step 330 for setting a gas pressure greater than or approximately equal to the surface equilibrium pressure of the group III nitride semiconductor body; and a step 340 for heating the group III nitride semiconductor body in the surface equilibrium chamber to a high implantation temperature, while maintaining the gas pressure substantially. Furthermore, a step 350 for performing ion implantation of the group III nitride semiconductor body at a high implantation temperature in the surface equilibrium chamber, while maintaining the gas pressure substantially, is included. Implantation is performed using an ion implanter interfacing with the surface equilibrium chamber. |
