| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a variable capacity memory capable of reconfiguring the memory capacity.SOLUTION: The variable capacity memory having plural basic units comprises: a memory cell array whose basic unit has one cell transistor T0 and one resistance change element R0; a mode selector 1B that selectively switches between a first mode in which 1 bit reading/writing is made on 2(n is an integer) basic units in the plural basic units and a second mode in which 1 bit reading/writing is made on 2(m is an integer; n≠m) basic units in the plural basic units; and a control circuit that controls the switching between the first mode and the second mode.</p> |
