SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device using an oxide semiconductor which has more favorable electrical characteristics.SOLUTION: A semiconductor device comprises: an oxide semiconductor layer 405; a first conductive region 404a on the oxide semiconductor layer; a source electrode 403a on the first region; a second conductive region 404b on the oxide semiconductor layer; a drain electrode 403b on the second region; and a gate electrode 401 on the oxide semiconductor layer, in which the gate electrode has a region which overlaps the first region and the gate electrode has a region which overlaps the second region.