| 摘要 |
PROBLEM TO BE SOLVED: To maintain uniformity of a processed surface of a workpiece while eliminating the need to change a configuration.SOLUTION: A plasma processing method includes a gas supply step, a power supply step, and an etching step. The gas supply step supplies a process gas into a processing container in which a workpiece is arranged. The power supply step supplies power for plasma generation and power for bias. The power for plasma generation is used to generate plasma of the process gas supplied into the processing container and has a frequency of 100 MHz to 150 MHz. The power for bias has a lower frequency than the power for plasma generation. The etching step etches the workpiece with the plasma of the process gas while pulse-modulating the power for bias so that a duty ratio becomes 10% to 70% and the frequency becomes 5 kHz to 20 kHz. |
