发明名称 SEMICONDUCTOR DEVICE
摘要 According to one embodiment, a semiconductor device includes a first differential amplifier and a second differential amplifier. The first differential amplifier charges the first output terminal with a second voltage different from a first voltage. The first differential amplifier uses a first clock signal, stopping the charging at the first output terminal, receives first complementary data of the first voltage at the rising edge of a second clock signal, and outputs the first complementary data at the second voltage. The second differential amplifier charges the second output terminal with the second voltage. The second differential amplifier uses a third clock signal, stopping the charging at the second output terminal, receives second complementary data of the first voltage at the rising edge of a fourth clock signal, and outputs the second complementary data at the second voltage.
申请公布号 US2014285247(A1) 申请公布日期 2014.09.25
申请号 US201314020705 申请日期 2013.09.06
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ITO Mikihiko;KOYANAGI Masaru;MASUDA Masami;INAGAKI Maya
分类号 H03K5/12 主分类号 H03K5/12
代理机构 代理人
主权项 1. A semiconductor device comprising: a first differential amplifier configured to charge a first output terminal with a second voltage different from a first voltage, to use a first clock signal, thereby to stop the charging at the first output terminal, to receive first complementary data of the first voltage at the rising edge of a second clock signal, and to output the first complementary data at the second voltage from the first output terminal; a second differential amplifier configured to charge a second output terminal with the second voltage, to use a third clock signal, stopping the charging at the second output terminal, to receive second complementary data of the first voltage at the rising edge of a fourth clock signal, and to output the second complementary data at the second voltage from the second output terminal.
地址 Tokyo JP