| 摘要 |
A semiconductor device of an embodiment includes a normally-off transistor having a first source electrically connected to a source terminal, a first drain, and a first gate electrically connected to a gate terminal, a normally-on transistor having a second source electrically connected to the first drain, a second drain electrically connected to a drain terminal, and a second gate, a capacitor having one end electrically connected to the gate terminal and the other end electrically connected to the second gate; and a first diode having a first anode electrically connected to the capacitor and the second gate and a first cathode electrically connected to the first source. |
| 主权项 |
1. A semiconductor device, comprising:
a normally-off transistor having a first source electrically connected to a source terminal, a first drain, and a first gate electrically connected to a gate terminal; a normally-on transistor having a second source electrically connected to the first drain, a second drain electrically connected to a drain terminal, and a second gate; a capacitor having one end electrically connected to the gate terminal and the other end electrically connected to the second gate; and a first diode having a first anode electrically connected to the capacitor and the second gate and a first cathode electrically connected to the first source. |
