发明名称 |
SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS |
摘要 |
According to one embodiment, a semiconductor device comprises a first electrode; a second electrode containing a metal element; and a variable resistance element formed between the first electrode and the second electrode. The variable resistance element comprises an insulating first film disposed on a side of the first electrode and containing oxygen; and a second film disposed on the side of the second electrode and containing an element having a diffusion coefficient larger than the diffusion coefficient of the metal element in the first film and an electronegativity higher than the electronegativity of the metal element. |
申请公布号 |
US2014284540(A1) |
申请公布日期 |
2014.09.25 |
申请号 |
US201314018906 |
申请日期 |
2013.09.05 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUGURO Kyoichi |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a first electrode; a second electrode containing a metal element; and a variable resistance element formed between the first electrode and the second electrode, wherein the variable resistance element comprises: an insulating first film disposed on a side of the first electrode and containing oxygen; and a second film disposed on the side of the second electrode and containing an element having a diffusion coefficient larger than the diffusion coefficient of the metal element in the first film and an electronegativity higher than the electronegativity of the metal element. |
地址 |
Tokyo JP |