PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS

摘要

There are provided a plasma etching method and a plasma etching apparatus, capable of suppressing occurrence of local bias in etching rate and suppressing occurrence of charge-up damage. The plasma etching method of etching a silicon layer of a substrate to be processed using the plasma etching apparatus sets the pressure in a processing chamber to 13.3 Pa or more and applies, to a lower electrode, a first high-frequency power with a first frequency and a second high-frequency power with a second frequency that is lower than the first frequency and is a frequency of 1 MHz or lower.

主权项

1. A plasma etching method of etching a silicon layer of a substrate to be processed, comprising:
preparing a plasma etching apparatus, the plasma etching apparatus comprising: a processing chamber configured to house the substrate to be processed; a lower electrode arranged in the processing chamber, configured to mount the substrate to be processed thereon; an upper electrode arranged in the processing chamber, the upper electrode being opposed to the lower electrode; an etching gas supply mechanism configured to supply a predetermined etching gas into the processing chamber; and an exhaust mechanism configured to exhaust gas from the processing chamber; forming an atmosphere at a pressure of 13.3 Pa or more in the processing chamber by at least one of the etching gas supply mechanism and the exhaust mechanism; and applying, to the lower electrode, a first high-frequency power with a first frequency and a second high-frequency power with a second frequency being lower than the first frequency, the second frequency being a frequency of 1 MHz or lower.