发明名称 PATTERN FORMING PROCESS
摘要 PROBLEM TO BE SOLVED: To form a pattern that cannot be formed with a single negative pattern.SOLUTION: A patterning process comprises: applying a first resist material on a substrate to be processed, the first resist material comprising a resin which has a repeating unit including an acid labile group and is converted into insoluble with an organic solvent developer by elimination of the acid labile group, a photoacid generator, and a first organic solvent, prebaking the resist film to remove an unnecessary solvent, exposing the resist film to a high energy beam for patterning, heating developing with the organic solvent developer to obtain a first negative pattern; heating the first negative pattern to impart durability against a second organic solvent to be used for a second resist material; and applying the second resist material, prebaking, exposing, post-exposure baking, and developing with an organic solvent to form a second negative pattern different from the first negative pattern. Thus, the negative pattern of the first resist material and the negative pattern of the second resist material are simultaneously formed.
申请公布号 JP2014178671(A) 申请公布日期 2014.09.25
申请号 JP20140004816 申请日期 2014.01.15
申请人 SHIN ETSU CHEM CO LTD 发明人 HATAKEYAMA JUN;KATAYAMA KAZUHIRO
分类号 G03F7/40;C08F220/28;G03F7/004;G03F7/038;G03F7/039;G03F7/32;H01L21/027 主分类号 G03F7/40
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