MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

According to one embodiment, a first adhesive layer is formed on one major surface of a first substrate. The first substrate and a second substrate are adhered using a second adhesive layer that has thermosetting properties and covers the first adhesive layer, wherein a bonding strength between the second substrate is greater than a bonding strength between the second substrate and the first adhesive layer. The other major surface of the first substrate is polished, and the first substrate is thinned. A physical force is then applied to peripheral parts of the second adhesive layer, and a circular notched part is formed along the outer perimeter of the second adhesive layer to separate the first substrate and the second substrate at the interface between the first adhesive layer and the second adhesive layer.

主权项

1. A manufacturing method for a semiconductor device comprising:
applying a first adhesive layer and a second adhesive layer between a first major surface of a first substrate and a second substrate to adhere the first substrate to the second substrate, wherein the first adhesive layer has a bonding strength that is different than a bonding strength of the second adhesive layer; thinning a second major surface of the first substrate; and applying physical force to a peripheral portion of the second adhesive layer to form a circumferential notched part along an outer perimeter of the second adhesive layer.