RESISTANCE CHANGE MEMORY

摘要

According to one embodiment, a memory includes a memory cell array including blocks arranged in a column direction, first and second main global conductive lines each extending from a first end to a second end of the memory cell array in the column direction, a first resistance change element connected between the first and second main global conductive lines inside the memory cell array, a first reference global conductive line extending from the first end to the second end of the memory cell array in the column direction, and a second resistance change element connected to the reference global conductive line outside the memory cell array.

主权项

1. A resistance change memory comprising:
a memory cell array including blocks arranged in a column direction; first and second main global conductive lines each extending from a first end to a second end of the memory cell array in the column direction; first and second local conductive lines and a first resistance change element as a memory cell connected therebetween in each of the blocks, the first local conductive line connected to the first main global conductive line, the second local conductive line connected to the second main global conductive line; a first reference global conductive line extending from the first end to the second end of the memory cell array in the column direction; a second resistance change element as a reference cell connected to the reference global conductive line outside the memory cell array; and a sense amplifier connected to the first main global conductive line and the first reference global conductive line, and which reads data from the first resistance change element by comparing a first read current flowing the first resistance change element with a second read current flowing the second resistance change element in a reading.