NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

In a non-volatile semiconductor memory device, it is only necessary that, at the time of data writing, a voltage drop is caused in a high resistance region. Therefore, the value of voltage applied to a gate electrode can be reduced as compared with a conventional device. In correspondence with the reduction in the value of applied voltage, it is possible to reduce the film thickness of a gate insulating film of memory transistors, and further the film thickness of the gate insulating film of a peripheral transistor for controlling the memory transistors. As a result, the circuit configuration of the non-volatile semiconductor memory device can be reduced in size as compared with the conventional device.

主权项

1. A non-volatile semiconductor memory device including one or more memory transistors each having a single layer gate structure in which a gate electrode is provided on a substrate via a gate insulating film, wherein
the memory transistor comprises: a source region and a drain region each formed in a surface of the substrate; and a carrier storage region provided on the substrate and arranged between the gate electrode and the drain region, and in the surface of the substrate, a high resistance region is formed in a region in contact with the drain region and facing the carrier storage region, the high resistance region having a resistance value higher than a resistance value of the region between the source region and a channel region under the gate electrode.