LIGHT GENERATING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A light generating device and a method of manufacturing the light generating device are disclosed. The light generating device includes a p-type semiconductor layer, an n-type semiconductor layer, an active layer, a p-type electrode and an n-type electrode. The active layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. The p-type electrode provides the p-type semiconductor layer with holes. The n-type electrode provides the n-type semiconductor layer with electrons. At least one of the p-type electrode and n-type electrode has a protrusion protruding toward p-type semiconductor layer and the n-type semiconductor layer, respectively. Therefore, light efficiency is enhanced.

主权项

1. A light generating device comprising:
a p-type semiconductor layer; an n-type semiconductor layer; an active layer disposed between the p-type semiconductor layer and the n-type semiconductor layer; a p-type electrode providing the p-type semiconductor layer with holes; and an n-type electrode providing the n-type semiconductor layer with electrons, wherein at least one of the p-type electrode and n-type electrode has a protrusion protruding toward p-type semiconductor layer and the n-type semiconductor layer, respectively.