| 摘要 |
PROBLEM TO BE SOLVED: To provide a high frequency power amplifier that keeps a high frequency characteristic intact while locating a resistor close to a FET chip so as to suppress oscillation.SOLUTION: The high frequency power amplifier includes: a FET chip 30; a wire 40 having one end connected to the FET chip; an input side matching circuit substrate 16; a resistor 18 formed on the input side matching circuit substrate in series with the FET chip; a transmission part 20A formed of an electrical conductor on the input side matching circuit substrate so as to be in contact with one end of the resistor, and connected to an input electrode 14; a wire connection part 20C formed of an electrical conductor on the input side matching circuit substrate so as to be in contact with the other end of the resistor, and connected with the other end of the wire; and a short circuit part 20B formed of an electrical conductor on the resistor in a smaller width than the resistor so as to connect the transmission part and the wire connection part. |
