| 摘要 |
PROBLEM TO BE SOLVED: To improve the performance of a semiconductor device.SOLUTION: For example, the density of acceptors introduced into a nitride semiconductor layer LBL constituting a part of a superlattice layer PSL is higher than the density of acceptors introduced into a nitride semiconductor layer HBL constituting the other part of the superlattice layer PSL on a condition that the superlattice layer PSL is inserted between a buffer layer BUF and an electron transit layer CH. In other words, the density of acceptors introduced to the nitride semiconductor layer LBL having a small band gap is higher than the density of acceptors introduced to the nitride semiconductor layer HBL having a large band gap. |
