发明名称 PRODUCTION METHOD OF Mo ALLOY SPUTTERING TARGET MATERIAL AND Mo ALLOY SPUTTERING TARGET MATERIAL
摘要 PROBLEM TO BE SOLVED: To provide a production method that may produce a nonmagnetic Mo alloy sputtering target material of low resistance, superior in heat resistance, humidity resistance and adhesion to a substrate, high density and high purity suitable for an electrode and wiring thin film stably and at low cost and a novel Mo alloy sputtering target material.SOLUTION: Mo powder and at least one or two kinds of Ni alloy powder are mixed to contain 10 to 49 atom% of Ni and 1 to 30 atom% of Ti and to satisfy the composition in which a total amount of Ni and Ti is 50 atom% or less and the balance is Mo and inevitable impurities and then the mixture is pressed and sintered. A Mo alloy sputtering target material contains 10 to 49 atom% of Ni and 1 to 30 atom% of Ti, in which a total amount of Ni and Ti is 50 atom% or less and the balance is Mo and inevitable impurities and has a structure in which a Ni alloy phase is dispersed in the Mo matrix.
申请公布号 JP2014177696(A) 申请公布日期 2014.09.25
申请号 JP20140013133 申请日期 2014.01.28
申请人 HITACHI METALS LTD 发明人 MURATA HIDEO ; KAMINADA MASASHI ; INOUE KEISUKE
分类号 C23C14/34;B22F1/00;B22F3/14;B22F3/15;C22C1/04;C22C19/03;C22C27/04;H01L21/285 主分类号 C23C14/34
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