| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM |
| 摘要 |
A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, boron, carbon, and nitrogen and having a borazine ring skeleton on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a first precursor gas containing the predetermined element and a halogen group to the substrate; supplying a second precursor gas containing the predetermined element and an amino group to the substrate; supplying a reaction gas including an organic borazine compound to the substrate; and supplying a carbon-containing gas to the substrate. In addition, the cycle is performed under a condition in which the borazine ring skeleton in the organic borazine compound is maintained. |
| 申请公布号 |
US2014287597(A1) |
申请公布日期 |
2014.09.25 |
| 申请号 |
US201414219414 |
申请日期 |
2014.03.19 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
HIROSE Yoshiro;YAMAMOTO Ryuji;SANO Atsushi |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method of manufacturing a semiconductor device, comprising forming a thin film containing a predetermined element, boron, carbon, and nitrogen and having a borazine ring skeleton on a substrate by performing a cycle a first predetermined number of times, the cycle comprising:
supplying a first precursor gas containing the predetermined element and a halogen group to the substrate; supplying a second precursor gas containing the predetermined element and an amino group to the substrate; supplying a reaction gas including an organic borazine compound to the substrate; and supplying a carbon-containing gas to the substrate wherein the cycle is performed under a condition in which the borazine ring skeleton in the organic borazine compound is maintained. |
| 地址 |
Tokyo JP |
