METHODS FOR PRODUCING INTERCONNECTS IN SEMICONDUCTOR DEVICES

摘要

A method for producing interconnects on a workpiece includes obtaining a workpiece substrate having a feature, depositing a conductive layer in the feature, to partially or fully fill the feature, depositing a copper fill to completely fill the feature if the feature is partially filled by the conductive layer, applying a copper overburden, thermally treating the workpiece, and removing the overburden to expose the substrate and the metalized feature.

主权项

1. A method for forming an interconnect in a workpiece, the method comprising:
(a) obtaining a workpiece substrate including a feature; (b) depositing a metal conductive layer in the feature to partially or fully fill the feature; (c) depositing a metal fill to complete the filling of the feature if the feature is partially filled by the metal conducting layer; (d) applying a copper overburden; (e) annealing the workpiece; and (f) using CMP to remove the overburden and reduce the height of the workpiece to expose the workpiece substrate and the metalized feature.