THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DIODE DISPLAY INCLUDING THE SAME

摘要

A thin film transistor (TFT) includes a semiconductor on a substrate; an ohmic contact overlapping at least a portion of the semiconductor; a source electrode and a drain electrode on the ohmic contact; a gate insulating layer covering the semiconductor; and a gate electrode overlapping the semiconductor and between the source electrode and the drain electrode on the gate insulating layer, wherein the gate electrode is laterally separated from the drain electrode by a first distance and is laterally separated from the source electrode by a second distance.

主权项

1. A thin film transistor (TFT), comprising:
a semiconductor on a substrate; an ohmic contact overlapping at least a portion of the semiconductor; a source electrode and a drain electrode on the ohmic contact; a gate insulating layer covering the semiconductor; a gate electrode overlapping the semiconductor and between the source electrode and the drain electrode on the gate insulating layer, wherein the gate electrode is laterally separated from the drain electrode by a first distance and is laterally separated from the source electrode by a second distance; and an etch stop layer at the semiconductor between the ohmic contact and the semiconductor, wherein the source electrode and the drain electrode follow a contour of the ohmic contact.