发明名称 LIGHT-EMITTING DEVICE
摘要 A light-emitting device including a GaN-based semiconductor has a structure in which sequentially deposited are an n-type semiconductor layer, a superlattice structure layer including at least one InGaN superlattice layer, an active layer, an AlGaN-based semiconductor layer, and a p-type semiconductor layer. A concavo-convex structure is formed on the interface of the AlGaN-based semiconductor layer with the p-type semiconductor layer. The active layer is an InGaN layer or an InGaN quantum well layer. The InGaN superlattice layer has an In composition that is greater than that of the active layer.
申请公布号 US2014284550(A1) 申请公布日期 2014.09.25
申请号 US201414221243 申请日期 2014.03.20
申请人 STANLEY ELECTRIC CO., LTD. 发明人 KUMAGAI Mitsuyasu
分类号 H01L33/06;H01L33/00;H01L33/32 主分类号 H01L33/06
代理机构 代理人
主权项 1. A light-emitting device comprising a GaN-based semiconductor, the light-emitting device having a structure in which an n-type semiconductor layer, a superlattice structure layer including at least one InGaN superlattice layer, an active layer, an AlGaN-based semiconductor layer, and a p-type semiconductor layer are sequentially deposited in that order, wherein a concavo-convex structure is formed on an interface of the AlGaN-based semiconductor layer with the p-type semiconductor layer; the active layer is an InGaN layer or an InGaN quantum well layer; and the InGaN superlattice layer has an In composition that is greater than an In composition of the active layer.
地址 Tokyo JP