| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method and an etching device capable of carrying out dry etching to Si crystal or the like by using relatively inexpensive and easily acquirable gas without using a plasma generation device.SOLUTION: An etching device 100 is configured to carry out dry etching to an Si member S1. The etching device 100 includes: a reaction chamber 150 for carrying out etching to the Si member S1; a first gas supply part 111 for supplying first gas containing Fgas to the reaction chamber 150; and a second gas supply part 112 for supplying second gas containing NO gas to the reaction chamber 150. Then, the inner pressure of the reaction chamber 150 is set within the range of 10 Pa or more and 10000 Pa or less, and the mixed gas of first gas and second gas is introduced to the Si member S1 to carry out etching. |
