| 摘要 |
PROBLEM TO BE SOLVED: To stably form wiring grooves and via holes while not hindering etching of an interlayer insulator film in a dual damascene method.SOLUTION: The process of manufacturing a semiconductor apparatus includes: forming an interlayer insulator film 6 on a semiconductor substrate 1; forming wiring grooves and via holes in the interlayer insulator film 6 using an etching mask 30 composed of a silicon nitride film containing carbon by dry etching using a fluorocarbon-based (CF) process gas; burying a via plug in each of the via holes; and burying wiring in each of the wiring grooves. |
