| 发明名称 |
Wafer Edge Protector |
| 摘要 |
A wafer edge protector is used in an inductively coupled plasma reactive ion etching instrument for the manufacturing of GaN semiconductor devices and circuits. The wafer edge protector comprises a ring clamp, which has a first inner diameter and a second inner diameter, and the ring clamp covers the edges of a wafer and a wafer carrier to clamp the wafer and the wafer carrier and to prevent damage on the edges of the wafer and the wafer carrier during the etching process. |
| 申请公布号 |
US2014283991(A1) |
申请公布日期 |
2014.09.25 |
| 申请号 |
US201313847679 |
申请日期 |
2013.03.20 |
| 申请人 |
WIN SEMICONDUCTORS CORP. |
发明人 |
CHEN Chia-Hao;WEI Yi-Feng;HSIEH Yao-Chung;CHO I Te;WOHLMUTH Walter Tony |
| 分类号 |
H01L21/67 |
主分类号 |
H01L21/67 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A wafer edge protector, used in an inductively coupled plasma reactive ion etching instrument, the wafer edge protector having a ring clamp, wherein the ring clamp has a first inner diameter and a second inner diameter, and the ring clamp covers the edges of a wafer and a wafer carrier to clamp the water and the wafer carrier and to prevent damage on the edges of the wafer and the wafer carrier during the etching process. |
| 地址 |
Tao Yuan Shien TW |
