SEMICONDUCTOR DEVICE HAVING A THROUGH-SUBSTRATE VIA

摘要

Semiconductor devices are described that include a via that extends only partially through the substrate. Through-substrate vias (TSV) furnish electrical interconnectivity to electronic components formed in the substrates. In implementations, the semiconductor devices are fabricated by first bonding a semiconductor wafer to a carrier wafer with an adhesive material. The semiconductor wafer includes an etch stop disposed within the wafer (e.g., between a first surface a second surface of the wafer). One or more vias are formed through the wafer. The vias extend from the second surface to the etch stop.

主权项

1. A process comprising:
bonding a carrier wafer to a first surface of a semiconductor wafer with an adhesive material, the semiconductor wafer comprising an etch stop disposed within the semiconductor wafer between the first surface and a second surface opposite the first surface; and forming a via in the semiconductor wafer, the via extending from the second surface to the etch stop, the carrier wafer providing mechanical support to the semiconductor wafer during formation of the via.