| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
According to an embodiment, a semiconductor device includes a conductive substrate, a Schottky barrier diode, and a field-effect transistor. The Schottky barrier diode is mounted on the conductive substrate and includes an anode electrode and a cathode electrode. The anode electrode is electrically connected to the conductive substrate. The field-effect transistor is mounted on the conductive substrate and includes a source electrode, a drain electrode, and a gate electrode. The source electrode of the field-effect transistor is electrically connected to the cathode electrode of the Schottky barrier diode. The gate electrode of the field-effect transistor is electrically connected to the anode electrode of the Schottky barrier diode. |
| 申请公布号 |
US2014284610(A1) |
申请公布日期 |
2014.09.25 |
| 申请号 |
US201314015986 |
申请日期 |
2013.08.30 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YOSHIOKA Akira;SAITO Yasunobu;FUJIMOTO Hidetoshi;UCHIHARA Takeshi;YANASE Naoko;NAKA Toshiyuki;OHNO Tetsuya;ONO Tasuku |
| 分类号 |
H01L27/06 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a conductive substrate; a Schottky barrier diode mounted on the conductive substrate and having an anode electrode and a cathode electrode, the anode electrode electrically connected to the conductive substrate; and a field-effect transistor mounted on the conductive substrate and having a source electrode, a drain electrode, and a gate electrode, wherein, the source electrode is electrically connected to the cathode electrode; and the gate electrode is electrically connected to the anode electrode. |
| 地址 |
Tokyo JP |
