| 发明名称 |
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM FOR PERFORMING THE SAME |
| 摘要 |
In a supercritical fluid method a supercritical fluid is supplied into a process chamber. The supercritical fluid is discharged from the process chamber as a supercritical fluid process proceeds. A concentration of a target material included in the supercritical fluid discharged from the process chamber is detected during the supercritical fluid process. An end point of the supercritical fluid process may be determined based on a detected concentration of the target material. |
| 申请公布号 |
US2014283886(A1) |
申请公布日期 |
2014.09.25 |
| 申请号 |
US201414298304 |
申请日期 |
2014.06.06 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO Yong-Jhin;LEE Kun-Tack;LEE Hyo-San;KIM Young-Hoo;LEE Jung-Won;BAE Sang-Won;HO Jung-Min |
| 分类号 |
H01L21/67 |
主分类号 |
H01L21/67 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A processing system comprising:
a process chamber; a supply unit configured to supply a supercritical fluid to the process chamber; a discharge unit configured to discharge the supercritical fluid from the process chamber; and a detection unit provided in the discharge unit, and configured to detect a concentration of a target material included in the supercritical fluid discharged from the process chamber during a supercritical fluid process. |
| 地址 |
Suwon-si KR |
