发明名称 RESISTANCE CHANGE MEMORY
摘要 According to one embodiment, a resistance change memory includes the following configuration. A first inverter includes first input and first output terminals and first and second voltage terminals. A second inverter includes second input and second output terminals and third and fourth voltage terminals. The second input terminal is connected to the first output terminal. The second output terminal is connected to the first input terminal. First and second transistors are connected to the first and second output terminals, respectively. Third and fourth transistors are connected to the first and third voltage terminals, respectively. A fifth transistor is connected between the first voltage terminal and the first memory cell. A sixth transistor is connected to the third voltage terminal. A controller turns on the first and second transistors, after turning off the fifth and sixth transistors.
申请公布号 US2014286080(A1) 申请公布日期 2014.09.25
申请号 US201314018011 申请日期 2013.09.04
申请人 TAKAHASHI Masahiro;KIM Dong Keun;YIM Hyuck Sang 发明人 TAKAHASHI Masahiro;KIM Dong Keun;YIM Hyuck Sang
分类号 G11C13/00 主分类号 G11C13/00
代理机构 代理人
主权项 1. A resistance change memory comprising: a first memory cell including a resistance change element; a first inverter including a first input terminal, a first output terminal, and first and second voltage terminals; a second inverter having a second input terminal, a second output terminal, and third and fourth voltage terminals, the second input terminal being connected to the first output terminal, the second output terminal being connected to the first input terminal; a first MOS transistor being connected to the first output terminal, the first MOS transistor having a gate supplied with a first signal; a second MOS transistor being connected to the second output terminal, the second MOS transistor having a gate supplied with the first signal; a third MOS transistor being connected to the first voltage terminal; a fourth MOS transistor being connected to the third voltage terminal; a fifth MOS transistor being connected between the first voltage terminal and the first memory cell, the fifth MOS transistor having a gate supplied with a second signal; a sixth MOS transistor being connected to the third voltage terminal, the sixth MOS transistor having a gate supplied with the second signal; and a controller that outputs the first and second signals, the controller turning on the first and second MOS transistors by using the first signal, after turning off the fifth and sixth MOS transistors by using the second signal.
地址 Seongnam-si KR