| 摘要 |
This nitride semiconductor device is provided with: a first semiconductor layer (1) that is a nitride semiconductor formed on a substrate; a second semiconductor layer (2) that is a nitride semiconductor laminated on the first semiconductor layer (1) so as to form a heterointerface (4); a two-dimensional electron layer (5) that is formed on the heterointerface (4) between the first semiconductor layer (1) and the second semiconductor layer (2); a recess (7) which penetrates through the second semiconductor layer (2) and reaches a part of the first semiconductor layer (1); and an ohmic electrode (6) which is partially embedded within the recess (7). The acute angle formed by the heterointerface (4) and a surface of the ohmic electrode (6), said surface being in contact with the second semiconductor layer (2), is set to be 60° or more but 85° or less. Consequently, the contact resistance between the first semiconductor layer (1) and the ohmic electrode (6) is reduced. |
