| 摘要 |
The invention relates to a pseudo-Schottky diode, comprising an n-channel trench field effect transistor, which comprises a cathode (K), an anode (A) and between the cathode and the anode a highly n+ doted silicon substrate (1), an n-doted epitaxial layer (2), trenches (3) extending in the n-doted epitaxial layer (2), p-doted body regions (6) provided between the trenches (3), as well as highly n+ doted regions (8) and highly p+ doted regions (7) provided on the surface of the body regions (6), wherein the gate, the body regions and the source region are monolithically and electrically connected to each other, and in which the drain region serves as a cathode, wherein on the lateral edges of the trenches (3) dielectric layers (4) are provided, the trenches (3) are filled with a p-doted polysilicon layer (5), the bottoms of some or all trenches (3) are formed from a further p-doted layer (12) contacted with the p-doted polysilicon layer (5), wherein the further p-doted layers (12) determine the breakdown voltage of the pseudo-Schottky diode. |
