| 摘要 |
Methods and devices for selection and/or isolation of memory cells include use of a thyristor For example, a memory storage component may be selected for access, at least in part, by initiating application of a triggering potential to affect a gate of a thyristor that is coupled in series with a memory storage component. The gate of the thyristor connects to a memory cell word line and permits an efficient polarity scheme for selected and unselected memory array conductors to reduce leakage current relative to conventional selectors, such as bipolar junction transistors. |
