NH3 CONTAINING PLASMA NITRIDATION OF A LAYER OF A THREE DIMENSIONAL STRUCTURE ON A SUBSTRATE

摘要

Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a first temperature; and exposing the first layer to an RF plasma formed from a process gas comprising ammonia (NH3) to transform the first layer into a nitrogen-containing layer, wherein the plasma has an ion energy of less than about 8 eV.