| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitance type sensor having a wide dynamic range and small mismatching between sensing sections, and yet capable of compaction and noise reduction.SOLUTION: A chamber 15 penetrating vertically is bored in a silicon substrate 12. On the upper surface of the silicon substrate 12, a diaphragm 13 is disposed to cover the upper surface opening of the chamber 15. The diaphragm 13 is divided, by a slit 17, into a region (first diaphragm 13a) located above the chamber 15, and a region (second diaphragm 13b) located above the upper surface of the silicon substrate 12. A fixed electrode plate 19 is disposed above the first diaphragm 13a, and a first acoustic sensing section 23a for small volume is formed by the first diaphragm 13a and the fixed electrode plate 19. A second acoustic sensing section 23b for large volume is formed by the second diaphragm 13b and the upper surface of the silicon substrate 12 (conductive layer 21). |
