SUBSTRATE PROCESSING APPARATUS

摘要

There is provided a substrate processing apparatus including: a cleaning tank configured to clean a target substrate; a drying chamber configured to communicate with an upper area of the cleaning tank and dry the target substrate picked up from the cleaning tank; a first drying gas supply unit configured to supply a first drying gas containing vapor of a solvent for removing a liquid; a second drying gas supply unit configured to supply a second drying gas not containing the vapor of the solvent for removing the liquid; a substrate holder configured to pick up the target substrate from the cleaning tank and transfer the target substrate to the drying chamber; and a controller configured to output a control signal to alternately supply the first drying gas and the second drying gas.

主权项

1. A substrate processing apparatus comprising:
a cleaning tank configured to clean a target substrate by immersing the target substrate in a cleaning solution in a longitudinal direction while the cleaning solution is supplied from a cleaning solution supply unit; a drying chamber configured to communicate with an upper area of the cleaning tank and dry the target substrate picked up from the cleaning tank; a first drying gas supply unit configured to supply a first drying gas containing vapor of a solvent for removing a liquid to an atmosphere ranging from the upper area of the cleaning tank to an inside of the drying chamber; a second drying gas supply unit configured to supply a second drying gas not containing the vapor of the solvent for removing the liquid to the atmosphere ranging from the upper area of the cleaning tank to the inside of the drying chamber; a substrate holder configured to pick up the target substrate from the cleaning tank and transfer the target substrate to the drying chamber while holding the target substrate in a longitudinal direction; and a controller configured to output a control signal to alternately supply the first drying gas and the second drying gas to an area where the target substrate is exposed after an upper end of the cleaned target substrate is picked up from a liquid surface of the cleaning solution by the substrate holder, wherein when a cycle is defined as a period of time required to respectively supply the first drying gas and the second drying gas one time, at least one cycle is repeated between a time when the upper end of the target substrate is picked up from the cleaning solution and a time when the whole target substrate is picked up from the cleaning solution.