SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

A trench (TR) has first through third side surfaces (SW1 to SW3) comprising first through third semiconductor layers (121 to 123), respectively. First side wall sections (201S) of a first insulating film (201) have first through third regions (201a to 201c) located on top of the aforementioned first through third side surfaces (SW1 to SW3), respectively. A second insulating film (202) has second side wall sections (202S) located on top of the aforementioned first side wall sections (201S). Each of said second side wall sections (202S) has the following: one end (E1) that connects to a second bottom section (202B) of the second insulating film; and another end (E2) that is located on top of the first region (201a) or the second region (201b) at a distance from the third region (201c). This makes it possible to reduce the capacitance of a gate electrode.