A method includes sensing a state of a data cell to generate a data voltage. The state of the data cell corresponds to a state of a programmable resistance based memory element of the data cell. The method further includes sensing a state of a reference cell to generate a reference voltage. The state of the data cell and the state of the reference cell are sensed via a common sensing path. The method further includes determining a logic value of the data cell based on the data voltage and the reference voltage.
申请公布号
WO2014150791(A2)
申请公布日期
2014.09.25
申请号
WO2014US24245
申请日期
2014.03.12
申请人
QUALCOMM INCORPORATED;INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY