| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of improving operation reliability.SOLUTION: A semiconductor device is provided with a sense amplifier which includes a bus LBUS, a first and a second latch circuits SDL and LDL, and a third transistor. The first latch circuit SDL includes a first transistor 60 connected to the bus, and the second latch circuit LDL includes a second transistor 70 connected to the bus. When data is transferred from the first latch circuit SDL to the second latch circuit LDL, the third transistor 30 precharges the bus (LBUS) to a potential (Vclh-Vt) that is lower than a power supply voltage VDDSA of the first and the second latch circuits, by application of a first voltage Vclh, which is lower than the power supply voltage, to a gate. Then, a second and a third voltages Vclm and Vcll that are lower than the power supply voltage are applied to gates of the first and the second transistors 60 and 70, respectively.</p> |
