SOLID-STATE IMAGING DEVICE

摘要

A solid-state imaging device includes a pixel chip, a logic chip and one or more shielding layers. The one or more shielding layers are arranged between or within the pixel chip and/or the logic chip to shield or reduce the effect of electromagnetic interference, radiation generated noise, or electromagnetic waves generated in one portion of the solid-state imaging device from affecting another portion of the solid-state imaging device.

主权项

1. A solid-state imaging device, comprising:
a first multilayered wiring layer formed over a transistor which is formed on a semiconductor substrate, wherein the first multilayered wiring layer comprises:
a first interlayer insulation film;a plurality of first wiring layers; anda plurality of wiring vias, which interconnect the plurality of first wiring layers disposed within the first interlayer insulation film; a first shield layer formed within the first interlayer insulation film; a second shield layer formed within the first interlayer insulation film and between two or more of the wiring vias; an imaging element; and a second multilayered wiring layer disposed between the imaging element and the first multilayered wiring layer, wherein the second multilayered wiring layer comprises a second interlayer insulation film, which is disposed on the first interlayer insulation film, and a plurality of second wiring layers that are disposed within the second interlayer insulation film.