发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING SEMICONDUCTOR DEVICE
摘要 To provide a semiconductor device which can write and read a desired potential. The semiconductor device includes a first transistor (Tr), a second Tr, and a capacitor. In the semiconductor device, operation of writing data is performed by a first step and a second step. In the first step, a low voltage is applied to a bit line and a first wiring to turn on the first Tr and the second Tr. In the second step, a first voltage is applied to the first wiring, and application of the low voltage to the bit line is stopped. Operation of reading the data is performed by a third step and a fourth step. In the third step, a high voltage is applied to the first wiring. In the fourth step, application of the high voltage to the first wiring is stopped, and a low voltage is applied to a capacitor line.
申请公布号 US2014286073(A1) 申请公布日期 2014.09.25
申请号 US201414218058 申请日期 2014.03.18
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 Onuki Tatsuya
分类号 G11C7/12 主分类号 G11C7/12
代理机构 代理人
主权项 1. A semiconductor device comprising: a first transistor, a channel region of the first transistor comprising an oxide semiconductor; a second transistor; a capacitor, one electrode of the capacitor electrically connected to one of a source and a drain of the first transistor and a gate of the second transistor; a word line electrically connected to a gate of the first transistor; a first wiring electrically connected to one of a source and a drain of the second transistor; a bit line electrically connected to the other of the source and the drain of the first transistor and the other of the source and the drain of the second transistor; a capacitor line electrically connected to the other electrode of the capacitor; and an A/D converter electrically connected to the first wiring.
地址 ATSUGI-SHI JP