发明名称 |
WORKFUNCTION MODULATION-BASED SENSOR TO MEASURE PRESSURE AND TEMPERATURE |
摘要 |
A workfunction modulation-based sensor comprising a field-effect transistor (FET). The FET comprises a substrate, a gate dielectric, a metal gate, a source, a drain, and a layer of sensing material that is electrically connected to the metal gate. An electrical connection that connects to the source of the FET. An electrical connection that connects to the drain of the FET. An electrical connection that connects to the layer of sensing material. An environment that includes an adsorbate gas surrounding, at least a portion of, the layer of sensing material. Wherein the sensing material is adapted to adsorb, at least in part, the adsorbate gas. The amount of adsorbate gas adsorbed on the layer of sensing material modulates the workfunction of the FET such that the degree of adsorbate gas adsorption corresponds to one of the temperature or pressure associated with the environment of the FET. |
申请公布号 |
US2014283616(A1) |
申请公布日期 |
2014.09.25 |
申请号 |
US201313849565 |
申请日期 |
2013.03.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Jayaraman Balaji;Murali Kota V. R. M.;Nowak Edward J.;Sathaye Ninad D.;Sathiyanarayanan Rajesh |
分类号 |
G01L9/00;G01K7/01 |
主分类号 |
G01L9/00 |
代理机构 |
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代理人 |
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主权项 |
1. A workfunction modulation-based sensor comprising:
a field-effect transistor (FET) comprising a substrate, a gate dielectric, a metal gate, a source, a drain, and a layer of sensing material that is electrically connected to the metal gate; an electrical connection that connects to the source of the FET; an electrical connection that connects to the drain of the FET; an electrical connection that connects to the layer of sensing material; and an environment that includes an adsorbate gas surrounding, at least a portion of, the layer of sensing material; wherein the sensing material is adapted to adsorb, at least in part, the adsorbate gas, and the amount of adsorbate gas adsorbed on the layer of sensing material modulates the workfunction of the FET such that the degree of adsorbate gas adsorption corresponds to one of the temperature or pressure associated with the environment of the FET. |
地址 |
Armonk NY US |