发明名称 |
FILM FORMING METHOD USING EPITAXIAL GROWTH AND EPITAXIAL GROWTH APPARATUS |
摘要 |
When a reaction chamber defined and formed by a ceiling plate as a top face, a substrate mounting portion as a bottom face, and a side wall as a lateral face is constructed, the ceiling plate is supported by a support at the circumferential edge of the ceiling plate from the upper side and the outer side of the circumferential edge, and the reactant gas is rectified in a reactant gas supply path disposed in the side wall so that a horizontal component in a flow direction of the reactant gas in the reaction chamber corresponds to a horizontal component in a direction extending from the center of an opening of the reactant gas supply path facing the reaction chamber to the center of the reaction chamber. |
申请公布号 |
WO2014151867(A1) |
申请公布日期 |
2014.09.25 |
申请号 |
WO2014US26589 |
申请日期 |
2014.03.13 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
OKABE, AKIRA;MORI, YOSHINOBU |
分类号 |
H01L21/20;H01L21/02;H01L21/324 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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