| 摘要 |
<p>A dielectric layer (33) is formed on an upper surface of a fixed electrode (32) formed of a semiconductor. A recess (33a) is formed in a surface of the dielectric layer (33) by recessing a part of the surface of the dielectric layer (33). An upper substrate (35a) is laminated on an upper surface of the dielectric layer (33) so as to cover the recess (33a). A thin film-like portion of the upper substrate (35a), said portion being positioned above the recess (33a), forms a conductive diaphragm (35) that can be warped due to pressure. Impurity concentration of at least the upper surface of the fixed electrode (32) is 2.00×1017-2.10×1019cm-3.</p> |
