SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

Provided is a semiconductor device manufacturing method whereby generation of a short-circuit between adjacent lower electrodes can be suppressed. The manufacturing method includes a step for forming a first interlayer insulating film (161), a step for forming cylinder holes (165) in the first interlayer insulating film (161), and a step for forming capacitors respectively having lower electrodes included in the cylinder holes (165). The step for forming the first interlayer insulating film (161) includes a step for sequentially laminating: a first insulating film (76); a second insulating film (78) having a lower wet etching rate than the first insulating film (76); a third insulating film (79), which has substantially the same wet etching rate as the second insulating film (78), and which has a smaller shrinkage ratio than the second insulating film (78), and a fourth insulating film (83) having a lower etching rate than the third insulating film (79).